Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• etching the deposit from below, resulting in under-etched structures. The evolution of the sidewall angle during etching has also been experimentally observed in a scanning electron microscope by continuously monitoring the secondary electron detector signal. Keywords: electron lithography; FEBID; FEBIE

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• /20 nm was deposited with an electron-beam evaporation machine. After lift-off, a double layer of MMA and ARP electron resist was deposited, which is necessary to form an aluminum oxide dielectric layer without breaking the vacuum. Then the electron lithography was made, but the resist was not

Hollow plasmonic antennas for broadband SERS spectroscopy

• Gabriele C. Messina,
• Mario Malerba,
• Pierfrancesco Zilio,
• Ermanno Miele,
• Michele Dipalo,
• Lorenzo Ferrara and
• Francesco De Angelis

Beilstein J. Nanotechnol. 2015, 6, 492–498, doi:10.3762/bjnano.6.50

• (SERS) and are activated by a wide range of excitation wavelengths. The three-dimensional hollow nanoantennas were produced on an optical resist by a secondary electron lithography approach, generated by fast ion-beam milling on the polymer and then covered with silver in order to obtain plasmonic

• technique based on secondary electron lithography was previously demonstrated [23]. Such a technique presents numerous advantages such as high versatility, allowing the production of structures with different sections, heights and diameters by controlling parameters such as the resist thickness and the beam

• accordance with calculations derived from the FEM method. Experimental Hollow three-dimensional electric field enhancing structures were obtained through an innovative fabrication method based on secondary electron lithography, generated by ion beam milling. The detailed process has been discussed elsewhere